BSH301 NXP Semiconductors, BSH301 Datasheet - Page 3

• Manufacturer Part Number: BSH301
• Description: Dual N-channel Enhancement Mode Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. T
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per transistor. Both devices may be loaded up to 3.5 W at the same time.
4. Maximum permissible dissipation per transistor. Device mounted on a printed-circuit board with R
5. Maximum permissible dissipation per transistor. Device mounted on a printed-circuit board with R
1999 Apr 06
Per FET
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
SYMBOL
stg
j
DS
GS
tot
Dual N-channel enhancement mode MOS transistor
tie-point) of 27.5 C/W.
tie-point) of 90 C/W.
S
is the temperature at the soldering point of the drain lead.
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source current (DC)
peak pulsed source current
PARAMETER
T
note 2
T
T
T
T
note 2
S
S
amb
amb
S
= 80 C; note 1
= 80 C; note 3
= 80 C
= 25 C; note 4
= 25 C; note 5
3
CONDITIONS
55
55
MIN.
Objective specification
20
5
20
1.75
1.85
0.95
+150
+150
1.75
7
8
MAX.
th a-tp
th a-tp
BSH301
(ambient to
(ambient to
V
V
A
A
W
W
W
A
A
C
C
UNIT