PHB146NQ06LT NXP Semiconductors, PHB146NQ06LT Datasheet - Page 5

• Manufacturer Part Number: PHB146NQ06LT
• Description: N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 13171
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
Figure 11
V
V
I
V
D
D
D
S
S
DS
GS
GS
GS
GS
GS
DD
GS
GS
T
T
T
T
T
T
T
T
T
= 25 A; V
= 20 A; dI
= 250 A; V
= 1 mA; V
= 25 A; V
Rev. 01 — 10 May 2004
j
j
j
j
j
j
j
j
j
= 55 V; V
= 10 V; V
= 10 V; I
= 5 V; I
= 4.5 V; I
= 0 V; V
= 30 V; R
= 5 V; R
= 0 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
D
DD
GS
S
DS
DS
R
G
D
/dt = 100 A/ s;
= 25 A;
D
GS
L
GS
= 30 V
= 10
= 25 A;
= 44 V; V
= 0 V;
DS
= V
= 25 A;
= 1.2 ;
= 25 V; f = 1 MHz;
= 0 V
= 0 V
= 0 V
GS
;
Figure 12
Figure 7
Figure 9
Figure 7
Figure 8
GS
= 5 V;
N-channel TrenchMOS™ logic level FET
and
and
and
Figure 13
8
10
8
PHB146NQ06LT
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
55
50
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
-
2
4.8
-
5.1
-
60
11.7
21.7
5675 -
755
255
37
95
177
106
0.8
64
79
Max
-
-
2
-
2.2
1
500
100
5.4
10.8
6
6.4
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 12
A
A