PHB146NQ06LT NXP Semiconductors, PHB146NQ06LT Datasheet - Page 7

• Manufacturer Part Number: PHB146NQ06LT
• Description: N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13171
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
I
V
V
D
GS(th)
(V)
GS
= 1 mA; V
2.5
1.5
0.5
junction temperature.
2
1
0
= 0 V; f = 1 MHz
-60
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 4
10 3
10 2
120
10 -1
T
03aa33
j
( C)
180
Rev. 01 — 10 May 2004
1
Fig 10. Sub-threshold drain current as a function of
10
T
(A)
10
I
10
10
10
10
10
j
D
= 25 C; V
-1
-2
-3
-4
-5
-6
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03ar15
N-channel TrenchMOS™ logic level FET
DS
10 2
= 5 V
1
PHB146NQ06LT
min
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
typ
2
max
V
GS
03aa36
(V)
3
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