PHB146NQ06LT NXP Semiconductors, PHB146NQ06LT Datasheet - Page 6

• Manufacturer Part Number: PHB146NQ06LT
• Description: N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13171
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
240
160
j
j
80
= 25 C
10
= 25 C
0
8
6
4
2
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
0.5
80
V GS = 3.2 V
1
10 V 5 V
160
1.5
V GS = 2.4 V
I D (A)
V DS (V)
4 V
03ar11
03ar12
3.6 V
3.6 V
3.2 V
2.8 V
10 V
4 V
5 V
6 V
240
2
Rev. 01 — 10 May 2004
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
a
I D
1.5
0.5
= 25 C and
=
80
60
40
20
0
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
R
V DS > I D x R DSon
N-channel TrenchMOS™ logic level FET
DSon
175
0
1
PHB146NQ06LT
C; V
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T j = 175 C
DS
60
I
D
x R
2
DSon
120
25 C
V GS (V)
T j ( C)
03ar13
03ne89
180
3
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