PHB11N50E NXP Semiconductors, PHB11N50E Datasheet - Page 3

• Manufacturer Part Number: PHB11N50E
• Description: Powermos Transistors Avalanche Energy Rated
• Manufacturer: NXP Semiconductors

Philips Semiconductors
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
December 1998
PowerMOS transistors
Avalanche energy rated
SYMBOL PARAMETER
I
I
V
t
Q
j
S
SM
rr
= 25 ˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body T
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
T
I
I
S
S
mb
mb
= 11 A; V
= 11 A; V
= 25˚C
= 25˚C
GS
GS
= 0 V
= 0 V; dI/dt = 100 A/ s
3
PHB11N50E, PHW11N50E
MIN.
-
-
-
-
-
TYP. MAX. UNIT
Product specification
630
6.9
-
-
-
10.9
1.2
44
-
-
Rev 1.000
ns
A
A
V
C