PHB11N50E NXP Semiconductors, PHB11N50E Datasheet - Page 8

• Manufacturer Part Number: PHB11N50E
• Description: Powermos Transistors Avalanche Energy Rated
• Manufacturer: NXP Semiconductors

Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
December 1998
PowerMOS transistors
Avalanche energy rated
Dimensions in mm
Net Mass: 5 g
damage to MOS gate oxide.
15.5
max
min
21
2.2 max
3.2 max
3.5
4.0
max
1
5.45
16 max
2
Fig.21. SOT429; pin 2 connected to mounting base.
5.45
1.1
3
15.5
max
5.3
8
0.4
7.3
seating
plane
M
2.5
1.8
5.3 max
PHB11N50E, PHW11N50E
0.9 max
o
3.5
max
Product specification
Rev 1.000