PHB11N50E NXP Semiconductors, PHB11N50E Datasheet - Page 6

• Manufacturer Part Number: PHB11N50E
• Description: Powermos Transistors Avalanche Energy Rated
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1998
PowerMOS transistors
Avalanche energy rated
Fig.14. Typical switching times ; t
Fig.15. Normalised drain-source breakdown voltage ;
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
450
400
350
300
250
200
150
100
9
8
7
6
5
4
3
2
1
0
50
0
1.15
1.05
0.95
0.85
0
1.1
0.9
Gate-source voltage, VGS (V)
0
Tj = 25 C
ID = 11A
1
Switching times, td(on), tr, td(off), tf (ns)
-100
RD = 22 Ohms
VDD = 250V
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
20
V
10
V
-50
GS
(BR)DSS
= f(Q
Tj, Junction temperature (C)
Gate resistance, RG (Ohms)
40
100 V
Gate charge, QG (nC)
/V
G
200V
20
); parameter V
0
(BR)DSS 25 ˚C
60
VDD=400V
50
30
d(on)
= f(T
80
, t
td(off)
DS
j
r
)
, t
100
PHP11N50E
40
d(off)
100
PHP11N50E
, t
td(on)
f
tf
= f(R
150
tr
120
50
G
)
6
Fig.18. Maximum permissible repetitive avalanche
avalanche current (I
20
18
16
14
12
10
100
0.01
0.1
100
8
6
4
2
0
10
0.1
10
1
1E-06
Fig.17. Maximum permissible non-repetitive
1
1E-06
0
Fig.16. Source-Drain diode characteristic.
Source-Drain Diode Current, IF (A)
Non-repetitive Avalanche current, IAS (A)
Maximum Repetitive Avalanche Current, IAR (A)
current (I
VDS
ID
0.2
unclamped inductive load
I
tp
1E-05
F
1E-05
PHB11N50E, PHW11N50E
Drain-Source Voltage, VSDS (V)
= f(V
AR
) versus avalanche time (t
0.4
Avalanche time, tp (s)
Avalanche time, tp (s)
SDS
AS
) versus avalanche time (t
); parameter T
125 C
1E-04
1E-04
0.6
Tj prior to avalanche = 25 C
Tj prior to avalanche = 25 C
150 C
PHP12N50E
125 C
PHP12N50E
Product specification
0.8
1E-03
1E-03
j
Tj = 25 C
PHP11N50E
1
p
Rev 1.000
)
1E-02
1E-02
1.2
p
);