BF547W NXP Semiconductors, BF547W Datasheet - Page 2

• Manufacturer Part Number: BF547W
• Description: Npn 1 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
It is primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the “Quick reference data” and “Limiting values”
1. T
June 1994
V
V
I
P
h
C
f
G
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
stg
j
Stable oscillator operation
High current gain
Good thermal stability.
CBO
CEO
tot
CBO
CEO
EBO
tot
re
NPN 1 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
PARAMETER
PARAMETER
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BF547W uses the same crystal as the
SOT23 version, BF547.
PINNING
PIN
1
2
3
open emitter
open base
up to T
I
I
I
f = 500 MHz
I
f = 100 MHz; T
open emitter
open base
open collector
up to T
C
C
C
C
= 2 mA; V
= 0; V
= 15 mA; V
= 1 mA; V
base
emitter
collector
s
s
CB
= 63 C; note 1
= 63 C; note 1
CONDITIONS
CONDITIONS
DESCRIPTION
= 10 V; f = 1 MHz
2
CE
CE
CE
amb
= 10 V
= 10 V;
= 10 V;
= 25 C
40
0.8
handbook, 2 columns
65
MIN.
MIN.
Marking code: E2.
Top view
95
1
1.2
20
TYP.
Fig.1 SOT323
30
20
3
50
300
+150
+150
Product specification
1
MAX.
30
20
50
300
250
1.6
MAX.
3
BF547W
MBC870
V
V
V
mA
mW
C
C
2
UNIT
V
V
mA
mW
pF
GHz
dB
UNIT