BF547W NXP Semiconductors, BF547W Datasheet - Page 5

• Manufacturer Part Number: BF547W
• Description: Npn 1 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1994
handbook, halfpage
handbook, halfpage
V CE(sat)
NPN 1 GHz wideband transistor
V
I
(V)
C
Fig.8
CE
gain
(dB)
/I
B
= 10 V; f = 100 MHz.
Fig.6
= 10.
0.8
0.6
0.4
0.2
30
20
10
0
1
0
0
0
Collector-emitter saturation voltage as a
function of collector current; typical values.
Gain as a function of collector current;
typical values.
2
5
4
10
6
15
8
I
C
I
C
(mA)
MLB590
MLB592
(mA)
20
10
5
handbook, halfpage
handbook, halfpage
V
V
CE
CE
gain
(dB)
(dB)
= 10 V; I
= 10 V; Z
Fig.9
F
50
40
30
20
10
0
6
4
0
2
10
Fig.7
10
1
C
S
= 15 mA.
Minimum noise figure as a function of
collector current; typical values.
= Z
Gain as a function of frequency;
typical values.
L
= 50 ; f = 100 MHz.
10
2
1
10
I
3
Product specification
C
(mA)
f (MHz)
BF547W
MLB591
MLB593
10
10
4