BF547W NXP Semiconductors, BF547W Datasheet - Page 3

• Manufacturer Part Number: BF547W
• Description: Npn 1 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
June 1994
R
V
V
V
I
h
C
f
G
SYMBOL
SYMBOL
j
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
th j-s
= 25 C (unless otherwise specified).
re
NPN 1 GHz wideband transistor
UM
s
UM
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming s
thermal resistance from junction to soldering point
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
PARAMETER
PARAMETER
I
I
I
I
I
I
I
f = 500 MHz
I
f = 100 MHz; T
C
C
E
E
C
C
C
C
= 0.01 mA; I
= 0; V
= 0.01 mA; I
= 10 mA; I
= 2 mA; V
= 0; V
= 15 mA; V
= 1 mA; V
CONDITIONS
CB
CB
= 10 V
= 10 V; f = 1 MHz
3
12
CE
CE
B
CE
is zero.
= 0
C
E
amb
= 10 V
= 10 V;
= 0
= 0
= 10 V;
= 25 C;
up to T
G
UM
s
=
CONDITIONS
= 63 C; note 1
10
40
0.8
log
MIN.
------------------------------------------------------------ dB.
1
–
s
95
1
1.2
20
11
TYP.
2
s
21
1
2
Product specification
–
30
20
3
100
250
1.6
VALUE
MAX.
s
290
22
BF547W
2
V
V
V
nA
pF
GHz
dB
UNIT
UNIT
K/W