BLW60C NXP Semiconductors, BLW60C Datasheet - Page 3

• Manufacturer Part Number: BLW60C
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
(dissipation = 40 W; T
March 1993
handbook, halfpage
Collector-emitter voltage (V
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
R.F. power dissipation (f
Storage temperature
Operating junction temperature
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
VHF power transistor
peak value
(A)
I C
10
10
1
2
1
T h = 70 C
Fig.2 D.C. SOAR.
mb
= 88 C, i.e. T
1 MHz); T
BE
10
= 0)
T mb = 25 C
1 MHz
V CE (V)
mb
h
= 25 C
= 70 C)
MGP479
10
2
3
handbook, halfpage
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; V
(W)
P rf
150
100
50
0
0
V
V
V
I
I
P
T
T
C(AV)
CM
stg
j
CESM
CEO
EBO
rf
R
R
R
th j-mb(dc)
th j-mb(rf)
th mb-h
max.
max.
max.
max.
max.
max.
max.
50
65 to
derate by 0.52 W/K
0.38 W/K
CE
=
=
=
T h ( C)
Product specification
16,5 V; f
100 W
150
200
36 V
16 V
22 A
BLW60C
2,05 K/W
0,45 K/W
4 V
9 A
MGP480
2,8 K/W
C
C
100
MHz.