BLW60C NXP Semiconductors, BLW60C Datasheet - Page 4

• Manufacturer Part Number: BLW60C
• Description: Vhf Power Transistor
• Manufacturer: NXP Semiconductors

CHARACTERISTICS
T
Note
1. Measured under pulse conditions: t
Philips Semiconductors
March 1993
Breakdown voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector cut-off current
Transient energy
D.C. current gain
D.C. current gain ratio of matched devices
Collector-emitter saturation voltage
Transition frequency at f = 100 MHz
Collector capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Collector-stud capacitance
j
= 25 C
VHF power transistor
V
open base; I
open collector; I
V
L = 25 mH; f = 50 Hz
open base
I
I
I
I
I
I
I
C
C
C
C
C
C
E
V
BE
BE
= 12,5 A; I
= 4 A; V
= 12,5 A; V
= 200 mA; V
BE
= 4 A; V
= 4 A; V
= I
= 0; I
= 0; V
e
= 1,5 V; R
= 0; V
C
CE
CE
CE
CE
= 50 mA
C
CB
B
= 15 V
= 12,5 V
= 5 V
= 5 V
CE
= 100 mA
= 2,5 A
CE
BE
= 15 V
E
(1)
= 12,5 V
= 25 mA
= 15 V
= 33
(1)
p
(1)
200 s;
(1)
0,02.
4
V
V
V
I
E
E
h
h
V
f
f
C
C
C
CES
T
T
FE
FE1
(BR)CES
(BR)CEO
(BR)EBO
CEsat
c
re
cs
/h
FE2
typ
typ
typ
typ
typ
typ
typ
10 to
Product specification
BLW60C
650 MHz
600 MHz
120 pF
160 pF
1,2
1,5 V
36 V
16 V
25 mA
50
80
80 pF
4 V
8 ms
8 ms
2 pF