BLW60C NXP Semiconductors, BLW60C Datasheet - Page 8

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BLW60C

Manufacturer Part Number
BLW60C
Description
Vhf Power Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
March 1993
handbook, halfpage
handbook, halfpage
VSWR = 1
VHF power transistor
P Lnom
(W)
(W)
P L
100
75
50
25
50
40
30
0
0
1
typical values
f = 175 MHz
1.1
10
Fig.11
Fig.9
T h = 25 C
T h = 70 C
V CC = 12.5 V
V CC = 13.5 V
1.2
20
VSWR =
10
20
50
5
V CCnom
P S (W)
P Snom
V CC
P S
MGP486
MGP488
1.3
30
8
Conditions for R.F. SOAR
f = 175 MHz
T
R
V
P
measured in circuit of Fig.7.
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
ratio.
handbook, halfpage
h
CCnom
S
th mb-h
S
= 70 C
= P
/P
(dB)
Snom
G p
Snom
10
= 12,5 V or 13,5 V
= 0,45 K/W
5
0
10
) increases linearly with supply over-voltage
at V
CCnom
typical values
f = 175 MHz
Th = 25 C
and VSWR = 1
Fig.10
30
G p
P L (W)
Product specification
V CC = 12.5 V
V CC = 13.5 V
BLW60C
MGP487
50
100
50
0
(%)

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