MBM29LV160TE70TN Meet Spansion Inc., MBM29LV160TE70TN Datasheet - Page 35

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MBM29LV160TE70TN

Manufacturer Part Number
MBM29LV160TE70TN
Description
Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet

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■ ERASE AND PROGRAMMING PERFORMANCE
■ PIN CAPACITANCE
Notes : • Test conditions T
Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Input Capacitance
Output Capacitance
Control Pin Capacitance
• DQ
Parameter
Parameter
15
/A
-1
pin capacitance is stipulated by output capacitance.
MBM29LV160TE
A
= +25°C, f = 1.0 MHz
C
C
C
100,000
Symbol
IN
OUT
IN2
Min
Retired Product DS05-20883-7E_July 31, 2007
V
V
V
Limits
OUT
IN
IN
16.8
Typ
16
1
8
= 0
= 0
= 0
Test Setup
70/90
Max
300
360
10
50
/MBM29LV160BE
cycle
Unit
µs
s
s
Typ
7.5
6
8
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Max
Comments
7.5
10
9
Unit
pF
pF
pF
70/90
35

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