MBM29LV160TE70TN Meet Spansion Inc., MBM29LV160TE70TN Datasheet - Page 38
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MBM29LV160TE70TN
Manufacturer Part Number
MBM29LV160TE70TN
Description
Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit
Manufacturer
Meet Spansion Inc.
Datasheet
1.MBM29LV160TE70TN.pdf
(64 pages)
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38
MBM29LV160TE
Notes: • PA is address of the memory location to be programmed.
Address
CE
OE
WE
Data
• PD is data to be programmed at word address.
• DQ
• D
• Figure indicates last two bus cycles out of four bus cycle sequence.
• These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.)
OUT
t
7
GHWL
is the output of the complement of the data written to the device.
Alternate WE Controlled Program Operation Timing Diagram
is the output of the data written to the device.
3rd Bus Cycle
t
CS
555h
t
WC
t
t
WP
DS
A0h
70/90
t
DH
t
WPH
t
t
AS
Retired Product DS05-20883-7E_July 31, 2007
CH
PA
/MBM29LV160BE
t
PD
AH
t
WHWH1
Data Polling
DQ
PA
7
D
OUT
t
DF
70/90
t
CE
t
RC
t
OE
D
OUT
t
OH