MT57V256H36E Micron Semiconductor Products, Inc., MT57V256H36E Datasheet - Page 16

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MT57V256H36E

Manufacturer Part Number
MT57V256H36E
Description
9Mb DDR SRAM 2.5V Vdd, HSTL Pipelined
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
Table 12: TAP AC Characteristics
Notes 1, 2; 0°C £ T
NOTE:
256K x 36 2.5V V
MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03
1.
2. Test conditions are specified using the load in Figure 10.
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
Setup Times
TMS setup
Capture setup
Hold Times
TMS hold
Capture hold
t
CS and
DD
, HSTL, Pipelined DDR SRAM
t
CH refer to the setup and hold time requirements of latching data from the boundary scan register.
Test Mode Select
A
£ +70°C; +2.4V £ V
Test Data-Out
Test Data-In
Test Clock
(TDO)
(TMS)
(TCK)
(TDI)
DD
1
£ +2.6V
t MVTH
t DVTH
0.16µm Process
2
TAP Timing
t THTL
t THMX
t THDX
Figure 9:
2.5V V
16
t
TLTH
3
SYMBOL
t
t
DD
t
t
t
t
t
t
t
MVTH
THMX
DVTH
THDX
THTH
TLOX
TLOV
THTL
TLTH
t
f
t
CH
TF
CS
t THTH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
, HSTL, PIPELINED DDR SRAM
DON’T CARE
4
t TLOX
t TLOV
5
MIN
UNDEFINED
100
40
40
10
10
10
10
10
10
0
MAX
6
10
20
256K x 36
©2003, Micron Technology Inc.
ADVANCE
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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