MT57V256H36E Micron Semiconductor Products, Inc., MT57V256H36E Datasheet - Page 17

• Manufacturer Part Number: MT57V256H36E
• Description: 9Mb DDR SRAM 2.5V Vdd, HSTL Pipelined
• Manufacturer: Micron Semiconductor Products, Inc.

TAP AC Test Conditions
Table 13: TAP DC Electrical Characteristics And Operation Conditions
0°C £ T
NOTE:
256K x 36 2.5V V
MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03
1. All voltages referenced to V
2. Overshoot: V
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Input pulse levels . . . . . . . . . . . . . . . . . . . . . . . . . .V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . 1ns
Input timing reference levels . . . . . . . . . . . . . . 1.25V
Output reference levels . . . . . . . . . . . . . . . . . . . . 1.25V
Test load termination supply voltage . . . . . . . . 1.25V
Undershoot: V
Power-up:
During normal operation, V
widths less than
A
£ +70°C; +2.4V £ V
DD
, HSTL, Pipelined DDR SRAM
V
IH
IH
IL
(
(
AC
£ +2.6 and V
AC
t
KHKL (MIN) or operate at frequencies exceeding
) ³ -0.5V for t £
) £ V
DD
DD
+ 0.7V for t £
£ +2.6V unless otherwise noted
DD
SS
DD
(GND).
Q must not exceed V
£ +2.4V and V
Output(s) disabled,
t
0V £ V
KHKH/2
0V £ V
|I
CONDITIONS
I
|I
OHC
OLC
I
OHT
OLT
| = 100µA
t
= 100µA
KHKH/2
IN
| = 2mA
= 2mA
IN
£ V
£ V
DD
DD
SS
DD
Q £ 1.4V for t £ 200ms
Q
0.16µm Process
to 2.5V
DD
2.5V V
. Control input signals (LD#, R/W#, etc.) may not have pulse
17
SYMBOL
V
V
V
V
DD
V
IL
V
IL
OH1
OH2
OL1
OL2
IH
IL
O
I
f
KF (MAX).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TAP AC Output Load Equivalent
, HSTL, PIPELINED DDR SRAM
TDO
MIN
-0.3
-5.0
-5.0
1.7
2.1
1.7
Figure 10:
Z = 50
O
V
DD
MAX
0.7
5.0
5.0
0.2
0.7
+ 0.3
1.25V
256K x 36
UNITS
©2003, Micron Technology Inc.
µA
µA
V
V
V
V
V
V
ADVANCE
20pF
50
NOTES
1, 2
1, 2
1
1
1
1