MT57V256H36E Micron Semiconductor Products, Inc., MT57V256H36E Datasheet - Page 6

• Manufacturer Part Number: MT57V256H36E
• Description: 9Mb DDR SRAM 2.5V Vdd, HSTL Pipelined
• Manufacturer: Micron Semiconductor Products, Inc.

Table 4:
NOTE:
256K x 36 2.5V V
MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03
1. SA0 and SA1 are internally advanced in accordance with the burst order table. Bus cycle is terminated after burst
2. State transitions: L = (LD# = LOW); L# = (LD# = HIGH); R = (R/W# = HIGH); W = (R/W# = LOW).
3. State machine control timing sequence is controlled by K.
FIRST ADDRESS
(EXTERNAL)
count = 4.
LOAD NEW ADDRESS
Count=0
DD
, HSTL, Pipelined DDR SRAM
X...X00
X...X01
X...X10
X...X11
Linear Burst Address
L, Count=4
R
W
L, Count=4
SECOND ADDRESS
(INTERNAL)
Count=Count+2
Count=Count+2
WRITE DOUBLE
READ DOUBLE
X...X01
X...X10
X...X11
X...X00
Bus Cycle State Diagram
0.16µm Process
L#, Count=4
L#, Count=4
Figure 4:
2.5V V
always
Count=2
always
Count=2
6
THIRD ADDRESS
(INTERNAL)
L
DD
ADVANCE ADDRESS
ADVANCE ADDRESS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
, HSTL, PIPELINED DDR SRAM
X...X10
X...X11
X...X00
X...X01
BY TWO 1
BY TWO 1
FOURTH ADDRESS
(INTERNAL)
POWER-UP
256K x 36
X...X11
X...X00
X...X01
X...X10
NOP
©2003, Micron Technology Inc.
provided
voltage
Supply
ADVANCE
L#