MT57V256H36E Micron Semiconductor Products, Inc., MT57V256H36E Datasheet - Page 9

• Manufacturer Part Number: MT57V256H36E
• Description: 9Mb DDR SRAM 2.5V Vdd, HSTL Pipelined
• Manufacturer: Micron Semiconductor Products, Inc.

Table 8:
Notes appear following parameter tables
Table 9:
Note 14; notes appear following parameter tables
Table 10: Thermal Resistance
Note 14; notes appear following parameter tables
256K x 36 2.5V V
MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03
DESCRIPTION
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply Current:
NOP
Output Supply Current:
DDR (Information only)
Address/Control Input Capacitance
Input, Output Capacitance (DQ)
Clock Capacitance
Junction to Ambient (Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
DD
, HSTL, Pipelined DDR SRAM
I
Capacitance
DD
Operating Conditions And Maximum Limits
Cycle time
All inputs £ VIL or
Device in NOP state; All
t
KHKH =
addresses/data static
Outputs open
CONDITIONS
C
L
³
t
= 15pF
KHKH (MIN);
; 0ºC £ T
t
KHKH (MIN);
Soldered on a 4.25 x 1.125 inch,
4-layer printed circuit board
³
VIH;
A
T
A
0.16µm Process
£ +70ºC; V
CONDITIONS
= 25°C; f = 1 MHz
CONDITIONS
2.5V V
SYMBOL
9
I
I
DD
I
SB1
DD
DD
Q
DD
= MAX unless otherwise noted
Micron Technology, Inc., reserves the right to change products or specifications without notice.
, HSTL, PIPELINED DDR SRAM
TYP
TBD
550
150
SYMBOL
SYMBOL
C
C
C
CK
O
I
q
q
q
650
225
JA
JC
JB
81
-5
MAX
TYP
30.9
TYP
4.5
5.5
1.0
9.6
6
550
175
68
-6
UNITS
MAX
°C/W
°C/W
°C/W
256K x 36
5.5
6.5
UNITS
7
mA
mA
mA
©2003, Micron Technology Inc.
ADVANCE
NOTES
9, 10, 11
UNITS
NOTES
10, 12
pF
pF
pF
15
16
13