MT28F160C34 Micron Technology, MT28F160C34 Datasheet - Page 19

• Manufacturer Part Number: MT28F160C34
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
CAPACITANCE
(T
READ, STANDBY AND DEEP POWER-DOWN CURRENT DRAIN
(-40ºC
NOTE: 1. I
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
4
A
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
PARAMETER/CONDITION
READ CURRENT:
V
(CE# = V
STANDBY CURRENT: V
V
DEEP POWER-DOWN CURRENT: V
V
(RP# = V
READ CURRENT: V
DEEP POWER-DOWN CURRENT: V
(RP# = V
STANDBY CURRENT: V
U
= +25ºC; f = 1 MHz)
CC
CC
CC
.com
= V
= V
= V
2. Automatic power savings (APS) mode reduces I
T
CC
CC
CC
A
CC
IL
IL
IL
; OE# = V
; Other inputs V
; V
(MAX), V
(MAX); (CE# = RP# = V
(MAX); V
is dependent on cycle rates.
+85ºC; V
PP
V
CC
PP
CC
IH
CC
)
CC
; RP# = V
SUPPLY
Q = V
Q = V
= 3.3V ±5%)
CC
PP
SUPPLY (V
SUPPLY
CC
CC
CC
Q or V
Q (MAX)
Q (MAX)
IH
; f = 5 MHz; Other inputs V
CC
CC
PP
Q)
SS
PP
)
SUPPLY
SUPPLY
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
V
CC
)
DataSheet4U.com
CC 1
to standby current level I
19
IH
or V
V
V
PP
PP
IL
)
V
V
CC
CC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
I
I
I
I
I
I
I
CC
CC
CC
PP
PP
PP
PP
CC 2
1
2
3
4
1
2
3
SYMBOL
for static operation.
C
C
O
I
TYP
50
1
1
2
1
1
–
MAX
12
MAX UNITS NOTES
8
±15
200
30
10
10
10
10
1 MEG x 16
UNITS NOTES
©2001, Micron Technology, Inc.
pF
pF
mA
µA
µA
µA
µA
µA
µA
ADVANCE
1, 2