MT28F160C34 Micron Technology, MT28F160C34 Datasheet - Page 3

• Manufacturer Part Number: MT28F160C34
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
BALL DESCRIPTIONS
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
46-BALL FBGA
1A, 1B, 1C, 1D,
2A, 2B, 2C, 3A,
3C, 5B, 6A, 6B,
6C, 7A, 7B, 7C,
2D, 2E, 2F, 3D, DQ0–DQ15
4F, 5D, 5E, 6D,
8A, 8B, 8C, 8D
3E, 3F, 4D, 4E,
4
6E, 6F, 7E, 7F
NUMBERS
U
.com
1F, 8E
3B
5A
7D
4B
4A
8F
5F
1E
SYMBOL
A0–A19
V
WE#
WP#
OE#
CE#
RP#
V
V
V
CC
CC
PP
SS
Q
Output
Supply
Supply
Supply
Supply
Input/
TYPE
Input
Input
Input
Input
Input
Input
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is
LOW, the cycle is either a WRITE to the command state machine (CSM)
or to the memory array.
Write Protect: Unlocks the soft-protected blocks when HIGH if V
1.65V–3.465V or 12V and RP# = V
affect WRITE or ERASE operation on other blocks.
Chip Enable: Activates the device when LOW. When CE# is HIGH, the
device is disabled and goes into standby power mode.
Reset/Power-Down: When LOW, RP# clears the status register, sets the
write state machine (WSM) to the array read mode and places the
device in deep power-down mode. All inputs, including CE#, are
“Don’t Care,” and all outputs are High-Z. RP# must be held at V
during all other modes of operation.
Output Enable: Enables data output buffers when LOW. When OE# is
HIGH, the output buffers are disabled.
Address Inputs: These address inputs select a unique, 16-bit word out
of the 1,048,576 available.
Data I/O: These data I/O are data output lines during any READ
operation or data input lines during a WRITE. Data I/O are used to
input commands to the CSM.
Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until
completion of the operation, V
“Don’t Care” during all other operations.
Power Supply: 3.3V ±5%.
I/O Supply Voltage: 3.3V ±5%.
Ground.
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
DESCRIPTION
PP
IH
must be 1.65V–3.465V or 12V. V
for WRITE or ERASE. Does not
1 MEG x 16
©2001, Micron Technology, Inc.
ADVANCE
IH
PP
PP
=
=