MT28F160C34 Micron Technology, MT28F160C34 Datasheet - Page 22

• Manufacturer Part Number: MT28F160C34
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
RECOMMENDED DC WRITE/ERASE CONDITIONS
(-40ºC
WRITE/ERASE CURRENT DRAIN
(-40ºC
WORD WRITE AND ERASE DURATION CHARACTERISTICS
NOTE: 1. Absolute WRITE/ERASE protection when V
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
4
PARAMETER/CONDITION
V
V
V
PARAMETER/CONDITION
WRITE CURRENT: V
ERASE CURRENT: V
ERASE/PROGRAM SUSPEND CURRENT: V
(ERASE/PROGRAM suspended)
WRITE/ERASE CURRENT: V
ERASE/PROGRAM SUSPEND CURRENT: V
(ERASE/PROGRAM suspended)
PARAMETER
Boot/parameter BLOCK ERASE time
Main BLOCK ERASE time
Boot/parameter BLOCK WRITE time
Main BLOCK WRITE time
Program/erase suspend latency
U
PP
PP
CC
.com
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
WRITE/ERASE lockout operation
2. 12V V
3. Parameter is specified when device is not accessed. Actual current draw will be I
4. The 12V V
5. Typical values measured at T
6. Assumes no system overhead.
7. Typical write times tested with checkerboard data pattern.
T
T
executed while the device is in suspend mode.
A
A
+85ºC; V
+85ºC; V
PP
is allowable for production only. Write timings are identical to 1.65V–3.465V V
PP
is for production only.
CC
CC
CC
CC
SUPPLY
SUPPLY
= 3.3V ±5%)
= 3.3V ±5%)
PP
SUPPLY
A
= +25ºC.
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
CC
PP
SUPPLY
SUPPLY
PP
DataSheet4U.com
V
PPLK
.
22
V
V
V
V
1.65V–3.465V V
PP
PP
PP
PP
SYMBOL
TYP
0.1
0.5
0.3
1
1
= V
= V
= V
= V
V
V
V
V
PPH
PPH
PPLK
LKO
PP
PP
PP
PP
1
2
1
2
1
2
MAX
3.3V ±5% Vcc
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4
5
–
–
3
I
I
I
I
I
I
I
MIN
1.65
11.4
CC
CC
CC
PP
PP
PP
PP
PP
–
–
4
5
6
5
6
7
8
TYP
0.1
0.3
0.5
CC 6
1
1
12V V
TYP
TYP
1.5
10
50
plus current of operation being
1
–
–
–
–
–
–
–
PP
PP
MAX
operation.
4
5
–
–
3
MAX
3.465
MAX
12.6
200
0.1
55
45
25
10
1
3
–
1 MEG x 16
UNITS
UNITS NOTES
µs
UNITS NOTES
©2001, Micron Technology, Inc.
s
s
s
s
mA
mA
mA
mA
µA
µA
µA
ADVANCE
V
V
V
V
4, 5, 6, 7
4, 5, 6, 7
NOTES
4, 5
4, 5
1
2
3