MT29F128G08WAAC6 Micron, MT29F128G08WAAC6 Datasheet - Page 89

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MT29F128G08WAAC6

Manufacturer Part Number
MT29F128G08WAAC6
Description
NAND Flash Memory
Manufacturer
Micron
Datasheet
Electrical Characteristics
Table 18:
Table 19:
V
PDF: 09005aef8278ee3f / Source: 09005aef81f17540
16gb_nand_mlc_l52a__2.fm -Rev. D 5/08 EN
Parameter/Condition
Voltage input
V
Storage temperature
Short circuit output current, I/Os
Parameter/Condition
Operating temperature
V
Ground supply voltage
CC
CC
CC
supply voltage
supply voltage
Power Cycling
Absolute Maximum Ratings by Device
Voltage on any pin relative to V
Recommended Operating Conditions
Stresses greater than those listed under “Absolute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not guaranteed. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
Micron NAND Flash devices are designed to prevent data corruption during power tran-
sitions. V
tection during power transitions.) When V
100µs should be allowed for the Flash device to initialize before any commands are exe-
cuted (see Figure 69 on page 90 for the states of signals during V
Both of the following conditions must be satisfied before R/B# will be valid:
• 50µs have elapsed since Vcc started its ramp.
• 10µs have elapsed since Vcc reached ≈ 2.5V
The RESET command must be issued to all CE#s as the first command after the NAND
Flash device is powered on. Each CE# will be busy for a maximum of 1ms after a RESET
command is issued.
Each NAND die will draw no more than I
mand after the device is powered on.
Commercial
Extended
CC
is internally monitored. (The WP# signal permits additional hardware pro-
Micron Confidential and Proprietary
SS
Symbol
Symbol
T
V
V
V
V
T
STG
CC
CC
IN
SS
A
89
w
w
w
16, 32, 64, 128Gb NAND Flash Memory
.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
ST
a
CC
Min
t
–40
2.7
prior to execution of the first RESET com-
0
0
a
reaches 2.5V for a 3V device, a minimum of
S
Min
–0.6
–0.6
–65
h
e
e
t
.
n
Electrical Characteristics
e
Typ
3.3
0
t
/
©2005 Micron Technology, Inc. All rights reserved.
CC
power cycling).
Max
+150
+4.6
+4.6
5
Max
+70
+85
3.6
0
Unit
Unit
mA
°C
°C
°C
V
V
V
V
D
a
t
a
s

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