MT58L64L36D Micron Semiconductor, MT58L64L36D Datasheet - Page 9

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MT58L64L36D

Manufacturer Part Number
MT58L64L36D
Description
(MT58LxxxLxxD) 2Mb SRAM
Manufacturer
Micron Semiconductor
Datasheet

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Part Number:
MT58L64L36D-10A
Quantity:
10
NOT RECOMENDED FOR NEW DESIGNS
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
Storage Temperature (plastic) ............ -55°C to +150°C
Junction Temperature** .................................... +150°C
Short Circuit Output Current ........................... 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
NOTE: 1. All voltages referenced to V
2Mb: 128K x 18, 64K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L128L18D_C.p65 – Rev. C, Pub. 11/02
IN
Relative to Vss .................................... -0.5V to +4.6V
Relative to Vss .................................... -0.5V to +4.6V
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
............................................... -0.5V to V
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
Undershoot: V
Power-up:
curves are available upon request.
≤ +70°C; V
DD
Q should never exceed V
DD
DD
Q Supply
Supply
DD
, V
V
V
IH
IL
IH
DD
≥ -0.7V for t ≤
≤ +4.6V for t ≤
≤ +3.6V and V
OH
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
SS
DD
(GND).
. V
t
DD
Output(s) disabled,
KC/2 for I ≤ 20mA
t
DD
KC/2 for I ≤ 20mA
≤ 3.135V for t ≤ 200ms
0V ≤ V
0V ≤ V
CONDITIONS
and V
I
I
OH
OL
DD
= -4.0mA
Q + 0.5V
= 8.0mA
DD
IN
IN
Q can be connected together for 3.3V I/O.
≤ V
≤ V
DD
DD
PIPELINED, DCD SYNCBURST SRAM
9
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
SYMBOL
V
V
V
2Mb: 128K x 18, 64K x 32/36
V
V
IL
V
DD
IL
OH
DD
OL
IH
IL
O
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.4
V
DD
MAX
V
0.8
1.0
1.0
0.4
3.6
+ 0.3
DD
UNITS
µA
µA
V
V
V
V
V
V
©2002, Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 4
1, 4
1, 5
3
1

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