2SK1159 Hitachi Semiconductor, 2SK1159 Datasheet - Page 4

• Manufacturer Part Number: 2SK1159
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1159, 2SK1160
4
60
40
20
0
20
16
12
8
4
0
Power vs. Temperature Derating
Drain to Source Voltage V
Case Temperature T
Typical Output Characteristics
10 V
10
50
20
6 V
V
GS
5.5 V
5.0 V
4.5 V
= 4 V
30
100
C
Pulse Test
(°C)
DS
40
(V)
150
50
0.05
1.0
0.5
0.2
0.1
50
20
10
20
16
12
5
2
8
4
0
1
Drain to Source Voltage V
V
Pulse Test
Maximum Safe Operation Area
Gate to Source Voltage V
Ta = 25°C
Typical Transfer Characteristics
DS
3
= 20 V
2
10
–25°C
4
30
2SK1160
2SK1159
6
100
Ta = 25°C
DS
GS
300
8
75°C
(V)
(V)
1,000
10