2SK1159 Hitachi Semiconductor, 2SK1159 Datasheet - Page 7

• Manufacturer Part Number: 2SK1159
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

0.03
0.01
1.0
0.3
0.1
Vin = 10 V
3
10
D = 1
0.05
0.02
0.5
0.2
0.1
Vin Monitor
Switching Time Test Circuit
50
100
Normalized Transient Thermal Impedance vs. Pulse Width
D.U.T
20
16
12
0
8
4
Pulse Test
V
1 m
Source to Drain Voltage V
R
DD
5, 10 V
L
Vout Monitor
0.4
Reverse Drain Current vs.
= 30 V
.
.
Source to Drain Voltage
Pulse Width PW (s)
0.8
10 m
1.2
V
GS
t d (on)
= 0, –10 V
Vout
Vin
SD
1.6
(V)
100 m
10 %
2.0
10 %
ch–c (t) =
ch–c = 2.08°C/W, T
P
90 %
t r
DM
Wavewforms
2SK1159, 2SK1160
T
t d (off)
PW
S
(t) · ch–c
90 %
1
T
C
= 25°C
C
90 %
D =
= 25°C
10 %
PW
t f
T
10
7