2SK2390 Hitachi Semiconductor, 2SK2390 Datasheet - Page 4

• Manufacturer Part Number: 2SK2390
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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2SK2390
4
40
30
20
10
20
16
12
8
4
0
0
10 V
Drain to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
2
50
6 V
5 V
4
100
V
GS
6
3.5 V
2.5 V
= 2 V
Tc (°C)
4 V
150
3 V
Pulse Test
V
DS
8
(V)
200
10
200
100
0.5
0.2
20
16
12
50
20
10
8
4
0
5
2
1
1
Gate to Source Voltage
–25°C
Operation in
this area is
limited by R
Ta = 25 °C
Drain to Source Voltage
Typical Transfer Characteristics
Maximum Safe Operation Area
2
2
DS(on)
5
Tc = 75°C
25°C
4
10
6
20
V
Pulse Test
DS
V
V
GS
DS
= 10 V
8
50
(V)
(V)
10
100