2SK2390 Hitachi Semiconductor, 2SK2390 Datasheet - Page 6

• Manufacturer Part Number: 2SK2390
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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2SK2390
6
100
500
200
100
80
60
40
20
50
20
10
5
0.1
0
V
V
DS
Reverse Drain Current
DD
Dynamic Input Characteristics
Body to Drain Diode Reverse
0.3
= 10 V
8
Gate Charge
25 V
50 V
V
Recovery Time
DD
1
16
= 50 V
di/dt = 50 A/ s
V
25 V
10 V
GS
3
V
24
GS
= 0, Ta = 25 C
Qg (nc)
I
10
D
= 15 A
I
DR
32
30
(A)
40
100
20
16
12
8
4
0
1000
500
200
100
500
200
100
50
20
10
50
20
10
5
0.2
0
V
PW = 5 µs, duty < 1 %
GS
Drain to Source Voltage V
V
f = 1 MHz
GS
0.5
Switching Characteristics
= 10 V, V
10
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
= 0
1
20
DD
t
t
d(off)
r t
d(on)
t f
2
Coss
= 30 V
Crss
Ciss
30
I
D
5
(A)
40
DS
10
(V)
20
50