2SK2390 Hitachi Semiconductor, 2SK2390 Datasheet - Page 5

• Manufacturer Part Number: 2SK2390
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

www.DataSheet4U.com
2.0
1.6
1.2
0.8
0.4
0
0.5
0.4
0.3
0.2
0.1
–40
Drain to Source Saturation Voltage vs.
Static Drain to Source on State Resistance
0
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
V
Case Temperature
GS
0
= 4 V
4
vs. Temperature
10 V
40
6
I
D
Pulse Test
80
5 A, 10 A, 15 A
I
= 15 A
V
D
10 A
GS
Tc
= 15 A
8
5 A
5 A
120
(V)
10 A
(°C)
10
160
0.5
0.2
0.05
0.02
0.01
20
10
0.5
0.2
0.1
5
2
1
0.2
1
Static Drain to Source on State Resistance
1
Forward Transfer Admittance vs.
Tc = –25 °C
Pulse Test
0.5
2
Drain Current I
V
Drain Current
GS
Drain Current
vs. Drain Current
1
= 4 V
5
10 V
25 °C
2
10
V
Pulse Test
D
75 °C
20
I
DS
5
D
(A)
= 10 V
(A)
2SK2390
10
50
20
100
5