2SK2569 Hitachi Semiconductor, 2SK2569 Datasheet - Page 4

• Manufacturer Part Number: 2SK2569
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK2569
4
0.5
0.4
0.3
0.2
0.1
0
–40
10
Static Drain to Source on State Resistance
8
6
4
2
0
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Case Temperature
2
V
Gate to Source Voltage
4 V
0
GS
vs. Temperature
= 2.5 V
4
40
6
0.05, 0.1 A
I
80
I
D
D
Pulse Test
= 0.2 A
Tc
= 0.2 A
V
0.05 A
0.1 A
GS
8
120
( C)
0.05 A
(V)
0.1 A
0.2 A
10
160
0.005
0.05
0.02
0.01
0.5
0.2
10
20
0.5
0.2
0.1
Static Drain to Source on State Resistance
0.01 0.02
5
2
1
0.001 0.003
Forward Transfer Admittance vs.
V
GS
Tc = –25 C
Drain Current
Drain Current I
vs. Drain Current
= 2.5 V
0.05 0.1
0.01
Drain Current
4 V
75 C
0.03
25 C
0.2
I
0.1
D
Pulse Test
V
D
Pulse Test
DS
(A)
(A)
= 10 V
0.5
0.3
1
1