2SK2569 Hitachi Semiconductor, 2SK2569 Datasheet - Page 5

• Manufacturer Part Number: 2SK2569
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

100
0.3
0.1
30
10
3
1
0
Drain to Source Voltage V
V
f = 1 MHz
GS
10
Typical Capacitance vs.
Drain to Source Voltage
= 0
20
0.20
0.16
0.12
0.08
0.04
30
0
Coss
Source to Drain Voltage
Ciss
Crss
Pulse Test
DS
40
0.2
Reverse Drain Current vs.
Source to Drain Voltage
(V)
–5 V
50
0.4
V
GS
0.6
= 0
0.05
0.02
0.5
0.2
0.1
0.01 0.02
2
1
V
0.8
SD
V
V
PW = 5 s
duty < 1 %
GS
DD
(V)
= 10 V
= 30 V
Switching Characteristics
1.0
Drain Current
0.05 0.1
t
t
d(off)
d(on)
t f
0.2
r t
I
D
(A)
2SK2569
0.5
1
5