TPC8207 Toshiba Semiconductor, TPC8207 Datasheet - Page 3

• Manufacturer Part Number: TPC8207
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs1
rss
t
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
DR
GS
DS
DS
GS
GS
GS
DS
DS
DD
GS
= 10 mA, V
= 10 mA, V
3
(Ta = 25°C)
= 6 A, V
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ± 10 V, V
= 2.0 V, I
= 2.5 V, I
= 4.0 V, I
∼ − 16 V, V
5 V
0 V
Test Condition
Test Condition
GS
w
D
D
GS
GS
GS
D
D
D
GS
GS
= 10 µ s
= 200 µ A
= 3.0 A
DS
= 0 V
= 4.2 A
= 4.2 A
= 4.8 A
⎯
= 0 V
= − 12 V
= 0 V
= 0 V, f = 1 MHz
V
= 5 V, I
= 0 V
I
DD
D
= 3 A
∼ − 10 V
D
= 6 A
V
OUT
Min
Min
0.5
5.5
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
2010
Typ.
Typ.
210
240
3.2
4.7
⎯
⎯
⎯
⎯
⎯
22
19
16
11
14
22
94
22
⎯
⎯
6
2004-07-06
TPC8207
Max
Max
− 1.2
± 10
1.2
10
45
30
20
24
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
m Ω
µ A
µ A
pF
nC
ns
V
V
S
A
V