TPC8207 Toshiba Semiconductor, TPC8207 Datasheet - Page 6

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TPC8207

Manufacturer Part Number
TPC8207
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Manufacturer
Toshiba Semiconductor
Datasheet

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0.05
0.03
0.01
100
0.5
0.3
0.1
50
30
10
0.01
5
3
1
Curves must be derated linearly
with increase in temperature.
I D max (pulse) *
* Single pulse Ta = 25°C
0.03
Drain-source voltage V
0.1
1000
100
Safe operating area
10
0.001
1
0
0.3
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10 ms *
1
Single-device value at dual
operation
3
0.01
V DSS max
DS
10
(V)
(Note 3b)
1 ms *
30
0.1
100
Pulse width t
r
th
6
− t
1
w
w
(S)
10
100
(4)
(3)
(2)
(1)
1000
2004-07-06
TPC8207

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