TPC8207 Toshiba Semiconductor, TPC8207 Datasheet - Page 5

• Manufacturer Part Number: TPC8207
• Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
• Manufacturer: Toshiba Semiconductor

10000
1000
100
2.0
1.5
1.0
0.5
50
40
30
20
10
10
0
−80
0.1
0
0
I D = 1.5 A, 3A, 6A
(1)
(2)
(3)
(4)
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Device mounted on a glass-epoxy board (a)
Ambient temperature Ta (°C)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
50
Capacitance – V
Device mounted on a glass-epoxy board (b)
0
1
R
DS (ON)
I D = 6 A
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
P
I D = 1.5A, 3 A, 6A
V GS = 2.5 V
D
operation (Note 3b)
t = 10 s
100
40
– Ta
– Ta
1.5A, 3A
80
10
DS
DS
Common source
Ta = 25°C
V GS = 0 V
f = 1 MHz
V GS = 2 V
Common source
Pulse test
V GS = 4 V
150
C oss
C rss
C iss
(V)
120
(Note 2a)
(Note 2b)
160
100
200
5
100
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
16
12
−80
1
0
8
4
0
−0
0
V DS
Dynamic input/output characteristics
5, 10
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (°C)
8
Total gate charge Q
3
−0.4
0
I
V GS
DR
V
16
th
1
−0.6
– V
40
4 V
– Ta
DS
8 V
g
−0.8
80
24
Common source
V DS = 10 V
I D = 200 µA
Pulse test
DS
Common source
I D = 6 A
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
(nC)
V GS = 0 V
V DD = 16 V
(V)
120
−1
32
2004-07-06
TPC8207
−1.2
160
8
6
4
2
0