FDU6644 Fairchild Semiconductor, FDU6644 Datasheet - Page 5
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FDU6644
Manufacturer Part Number
FDU6644
Description
30V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDU6644.pdf
(6 pages)
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Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.01
I
D
0.001
= 16A
R
0.01
SINGLE PULSE
DS(ON)
0.1
R
0.0001
1
V
JA
T
GS
A
= 96
= 25
LIMIT
= 10V
10
D = 0.5
o
o
C/W
C
0.2
0.1
0.1
V
0.05
DS
0.02
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
0.01
20
0.001
1
Figure 11. Transient Thermal Response Curve.
DC
30
SINGLE PULSE
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design.
10s
V
DS
1s
100ms
= 5V
0.01
10
10ms
15V
40
1ms
100µs
10V
50
100
0.1
t
1
, TIME (sec)
4000
3500
3000
2500
2000
1500
1000
80
70
60
50
40
30
20
10
500
0
0.1
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
C
RSS
5
C
V
Power Dissipation.
OSS
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
10
t
1
, TIME (sec)
15
P(pk)
C
Duty Cycle, D = t
T
R
ISS
J
R
100
JA
- T
10
JA
(t) = r(t) + R
20
A
t
1
= 96 °C/W
= P * R
t
2
SINGLE PULSE
R
FDD/FDU6644 Rev C(W)
V
f = 1MHz
T
JA
GS
A
= 96°C/W
= 25°C
25
JA
= 0 V
1
(t)
JA
/ t
2
1000
100
30