MT18LD1672AG-5X Micron, MT18LD1672AG-5X Datasheet - Page 12

• Manufacturer Part Number: MT18LD1672AG-5X
• Description: 16 MEG x 72 NONBUFFERED DRAM DIMM
• Manufacturer: Micron

EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 12, 29) (V
8, 16, 32 Meg x 72 Nonbuffered DRAM DIMMs
DM79.p65 – Rev. 2/99
AC CHARACTERISTICS
PARAMETER
Refresh period (4,096 cycles)
RAS# precharge time
RAS# to CAS# precharge time
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE# (CAS# HIGH)
WRITE command pulse width
WE# pulse width for output disable when CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
DD
= +3.3V ±0.3V)
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
RWD
WCH
WRH
t
RWC
WCR
WHZ
RWL
WCS
t
WPZ
WRP
RRH
t
RPC
RSH
REF
WP
RP
t
T
12
MIN
116
30
13
67
13
38
10
5
0
2
8
0
5
8
8
NONBUFFERED DRAM DIMMs
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
MAX
64
50
12
MIN
140
40
15
79
15
10
45
10
10
10
5
0
2
0
5
8, 16, 32 MEG x 72
-6
MAX
64
50
15
UNITS
©1999, Micron Technology, Inc.
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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ns
ns
NOTES
18
23