MT18LD1672AG-5X Micron, MT18LD1672AG-5X Datasheet - Page 13

• Manufacturer Part Number: MT18LD1672AG-5X
• Description: 16 MEG x 72 NONBUFFERED DRAM DIMM
• Manufacturer: Micron

SERIAL PRESENCE-DETECT EEPROM OPERATING CONDITIONS
(Notes: 1) (V
SERIAL PRESENCE-DETECT EEPROM AC ELECTRICAL CHARACTERISTICS
(Notes: 1) (V
8, 16, 32 Meg x 72 Nonbuffered DRAM DIMMs
DM79.p65 – Rev. 2/99
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: I
INPUT LEAKAGE CURRENT: V
OUTPUT LEAKAGE CURRENT: V
STANDBY CURRENT:
SCL = SDA = V
POWER SUPPLY CURRENT:
SCL clock frequency = 100 KHz
PARAMETER/CONDITION
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
DD
DD
= +3.3V ±0.3V)
= +3.3V ±0.3V)
DD
- 0.3V; All other inputs = GND or 3.3V +10%
OUT
IN
= 3mA
= GND to V
OUT
= GND to V
DD
DD
13
NONBUFFERED DRAM DIMMs
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
V
V
V
V
I
I
I
I
SYMBOL
LO
CC
SB
t
DD
t
t
OL
LI
t
t
IH
HD:DAT
IL
HD:STA
SU:DAT
SU:STA
SU:STO
t
t
t
HIGH
LOW
t
t
t
t
BUF
SCL
WR
AA
DH
t
t
t
R
F
I
V
DD
MIN
8, 16, 32 MEG x 72
-1
3
–
–
–
–
–
× 0.7 V
MIN
300
250
0.3
4.7
4.7
4.7
4.7
0
4
4
V
DD
DD
MAX
3.6
0.4
MAX
10
10
30
300
100
100
2
3.5
+ 0.5
× 0.3
10
1
©1999, Micron Technology, Inc.
UNITS NOTES
UNITS
mA
KHz
µA
µA
µA
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
V
V
V
V
NOTES
28