BFU710F NXP Semiconductors, BFU710F Datasheet - Page 2

• Manufacturer Part Number: BFU710F
• Description: NPN wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
2. Pinning information
3. Ordering information
BFU710F
Product data sheet
1.4 Quick reference data
Table 1.
[1]
[2]
Table 2.
Table 3.
Symbol Parameter
V
V
V
I
P
h
C
f
G
NF
P
Pin
1
2
3
4
Type number
BFU710F
C
T
FE
CBO
CEO
EBO
tot
L(1dB)
CBS
p(max)
T
G
sp
p(max)
is the temperature at the solder point of the emitter lead.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
noise figure
output power at 1 dB
gain compression
is the maximum power gain, if K > 1. If K < 1 then G
Quick reference data
Discrete pinning
Ordering information
Description
emitter
base
emitter
collector
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 1 — 20 April 2011
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Conditions
open emitter
open base
open collector
T
I
T
V
I
f = 2 GHz; T
I
f = 12 GHz; T
I
f = 12 GHz; Γ
I
Z
f = 5.8 GHz; T
C
C
C
C
C
sp
j
CB
S
= 25 °C
= 1 mA; V
= 9 mA; V
= 9 mA; V
= 2 mA; V
= 5 mA; V
= Z
≤ 90 °C
= 2 V; f = 1 MHz
NPN wideband silicon germanium RF transistor
L
= 50 Ω;
amb
CE
CE
CE
CE
CE
amb
S
amb
= Γ
= 2 V;
= 2 V;
= 2 V;
= 2 V;
= 2.5 V;
= 25 °C
Simplified outline
= 25 °C
= 25 °C
opt
p(max)
3
2
= Maximum Stable Gain (MSG).
[1]
[2]
1
4
Min
-
-
-
-
-
200
-
-
-
-
-
Typ
-
-
-
2
-
375
21
43
14
1.45
4.5
Graphic symbol
BFU710F
© NXP B.V. 2011. All rights reserved.
2
Max
10
2.8
1.0
10
136
550
-
-
-
-
-
mbb159
Version
SOT343F
1, 3
4
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
2 of 12
Datasheet pdf - http://www.DataSheet4U.net/