BFU710F NXP Semiconductors, BFU710F Datasheet - Page 7

• Manufacturer Part Number: BFU710F
• Description: NPN wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

www.DataSheet.co.kr
NXP Semiconductors
BFU710F
Product data sheet
Fig 7.
Fig 9.
NF
(dB)
(dB)
G
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
min
2.0
1.5
1.0
0.5
50
40
30
20
10
0
0
0
V
0
V
Minimum noise figure as a function of
collector current; typical values
Gain as a function of frequency; typical values
CE
CE
IS21I
= 2 V; I
= 2 V; T
2
MSG
5
2
C
amb
= 2 mA; T
(1)
(2)
(3)
(4)
(5)
= 25 °C.
10
4
G
p(max)
amb
15
6
= 25 °C.
20
All information provided in this document is subject to legal disclaimers.
8
001aam848
001aam850
f (GHz)
I
C
MSG
(mA)
25
10
Rev. 1 — 20 April 2011
Fig 8.
Fig 10. Minimum noise figure as a function of
NF
NPN wideband silicon germanium RF transistor
(dB)
(dB)
G
min
2.0
1.5
1.0
0.5
50
40
30
20
10
0
0
0
0
V
Gain as a function of frequency; typical values
I
frequency; typical values
C
CE
IS21I
= 2 mA; V
= 2 V; I
2
2
MSG
5
C
CE
4
= 9 mA; T
= 2 V; T
10
6
G
p(max)
amb
amb
8
15
= 25 °C.
= 25 °C.
10
BFU710F
© NXP B.V. 2011. All rights reserved.
20
f (GHz)
001aam849
001aam851
f (GHz)
12
MSG
25
14
7 of 12
Datasheet pdf - http://www.DataSheet4U.net/