BFU710F NXP Semiconductors, BFU710F Datasheet - Page 4

• Manufacturer Part Number: BFU710F
• Description: NPN wideband silicon germanium RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
7. Characteristics
Table 7.
T
BFU710F
Product data sheet
Symbol
V
V
I
I
h
C
C
C
f
G
|s
NF
G
C
CBO
T
j
FE
(BR)CBO
(BR)CEO
CES
EBS
CBS
21
p(max)
ass
= 25
|
2
°
C unless otherwise specified
Parameter
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
insertion power gain
noise figure
associated gain
Characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 April 2011
Conditions
I
I
I
I
V
V
V
I
T
I
I
I
T
I
T
C
C
E
C
C
C
C
C
C
amb
amb
amb
CB
EB
CB
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
= 0 mA; V
= 2.5 μA; I
= 1 mA; I
= 1 mA; V
= 9 mA; V
= 9 mA; V
= 9 mA; V
= 2 mA; V
= 2 mA; V
= 0.5 V; f = 1 MHz
= 2 V; f = 1 MHz
= 2 V; f = 1 MHz
= 25 °C
= 25 °C
= 25 °C
B
NPN wideband silicon germanium RF transistor
CB
CE
CE
CE
CE
CE
CE
E
= 0 mA
= 0 mA
= 4.5 V
= 2 V
= 2 V; f = 2 GHz;
= 2 V; T
= 2 V; T
= 2 V; Γ
= 2 V; Γ
amb
amb
S
S
= Γ
= Γ
= 25 °C
= 25 °C
opt
opt
;
;
[1]
Min Typ
10
2.8
-
-
200 375
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFU710F
-
-
2
-
183
262
21
43
30
29
27.5
21
14
25
24
23
17
11.5
0.55
0.55
0.60
0.85
1.45
27
24.5
22.5
16
11.5
© NXP B.V. 2011. All rights reserved.
Max Unit
-
-
10
100
550
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4 of 12
V
V
mA
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Datasheet pdf - http://www.DataSheet4U.net/