MBM29PL32BM Fujitsu Media Devices, MBM29PL32BM Datasheet

Page 1

FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 32 M (4M TM MirrorFlash * MBM29PL32TM/BM DESCRIPTION The MBM29PL32TM/ 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM ...

Page 2

MBM29PL32TM/BM (Continued) The standard MBM29PL32TM/BM offers access times of 90 ns, allowing operation of high-speed microproces- sors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The ...

Page 3

FEATURES • 0.23 m Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements • Industry-standard pinouts 48-pin TSOP (1) (Package suffix Normal Bend Type) 48-ball FBGA(Package suffix: PBT) • Minimum 100,000 program/erase ...

Page 4

MBM29PL32TM/BM PIN ASSIGNMENTS RESET N.C. WP/ACC RY/ ...

Page 5

PIN DESCRIPTIONS MBM29PL32TM/BM Pin Configuration Pin Address Inputs Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable WP/ACC Hardware Write Protection/Program Acceleration RESET Hardware Reset ...

Page 6

MBM29PL32TM/BM BLOCK DIAGRAM State Control RESET WP/ACC Command BYTE Register ( LOGIC SYMBOL 6 90/10 Erase Voltage Generator Program Voltage Generator ...

Page 7

DEVICE BUS OPERATION MBM29PL32TM/BM User Bus Operations (Word Mode : BYTE = V Operation Standby Autoselect Manufacture Code* 1 Autoselect Device Code* 1 Read Output Disable Write (Program/Erase) Enable Sector Group Protection* 2 Temporary Sector Group Unprotection Reset (Hardware) Sector ...

Page 8

MBM29PL32TM/BM MBM29PL32TM/BM User Bus Operations (Byte Mode : BYTE = V Operation Standby Autoselect Manufacture Code* 1 Autoselect Device Code* 1 Read Output Disable Write (Erase) Enable Sector Group Protection* 2 Temporary Sector Group Unprotection Reset (Hardware) Sector Write Protection ...

Page 9

MBM29PL32TM/BM Standard Command Definitions* First Bus Bus Command Write Write Cycle Cycles Sequence Req'd Addr Data Addr Word/ Reset XXXh F0h Byte 555h Word 2 Reset* 3 AAAh Byte 555h Word Autoselect 3 Byte AAAh Program 4 555h ...

Page 10

... WBL = Write Buffer Location HRA = Address of the HiddenROM area ; MBM29PL32TM (Top Boot Type)Word Mode : 1FFF7Fh to 1FFFFFh MBM29PL32BM (Bottom Boot Type)Word Mode : 000000h to 00007Fh *1 : The command combinations not described in “MBM29PL32TM/BM Standard Command Definitions” are illegal Both of these reset commands are equivalent except for "Write to Buffer Abort" reset. ...

Page 11

... Manufacturer’s Code Device Code MBM29PL32TM Extended Device Code* 2 MBM29PL32BM 4 Sector Group Protection for Byte mode Word mode, a read cycle at address 01h ( at Byte mode, 02h ) outputs device code. When 227Eh ( at Byte mode, 7Eh ) is output, it indicates that reading two additional codes, called Extended Device Codes, will be required ...

Page 12

MBM29PL32TM/BM Sector Address Sector SA0 SA1 SA2 SA3 SA4 ...

Page 13

Sector Address Sector SA32 SA33 SA34 SA35 ...

Page 14

MBM29PL32TM/BM (Continued) Sector Address Sector SA65 SA66 SA67 SA68 SA69 ...

Page 15

... Sector Address Table (MBM29PL32BM) Sector Address Sector SA70 SA69 SA68 SA67 SA66 SA65 SA64 SA63 ...

Page 16

MBM29PL32TM/BM Sector Address Sector SA37 SA36 SA35 SA34 SA33 0 ...

Page 17

Sector Address Sector SA4 SA3 SA2 SA1 0 0 ...

Page 18

MBM29PL32TM/BM Sector Group Address Table (MBM29PL32TM) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 1 SGA5 0 1 SGA6 0 1 SGA7 0 1 SGA8 1 0 SGA9 ...

Page 19

... Sector Group Address Table (MBM29PL32BM) Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 ...

Page 20

MBM29PL32TM/ 10h 0051h 11h 0052h 12h 0059h 13h 0002h 14h 0000h 15h 0040h 16h 0000h 17h 0000h 18h 0000h 19h 0000h 1Ah 0000h 1Bh 0027h 1Ch 0036h 1Dh 0000h 1Eh ...

Page 21

35h 0000h 36h 0000h 37h 0000h 38h 0000h 39h 0000h 3Ah 0000h 3Bh 0000h 3Ch 0000h 40h 0050h 41h 0052h 42h 0049h 43h 0031h 44h 0033h 45h 0008h 46h ...

Page 22

MBM29PL32TM/BM FUNCTIONAL DESCRIPTION Standby Mode There are two ways to implement the standby mode on the device, one using both the CE and RESET pins, and the other via the RESET pin only. When using both pins, CMOS standby mode ...

Page 23

... Group Address Table (MBM29PL32TM)” and “Sector Group Address Table (MBM29PL32BM)” in DEVICE BUS OPERATION defines the sector group address for each of the twenty-four (24) individual group sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector group addresses must be held constant during the WE pulse. See “ ...

Page 24

MBM29PL32TM/BM Temporary Sector Group Unprotection This feature allows temporary unprotection of previously protected sector groups of the devices in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to high voltage (V this ...

Page 25

COMMAND DEFINITIONS Device operations are selected by writing specific address and data sequences into the command register. “MBM29PL32TM/BM Standard Command Definitions” in DEVICE BUS OPERATION shows the valid register command sequences. Note that the Erase Suspend (B0h) and Erase Resume ...

Page 26

MBM29PL32TM/BM Programming is allowed in any address sequence and across sector boundaries. Beware that a data “0” cannot be programmed back to a “1”. Attempting may result in either failure condition or an apparent success according to ...

Page 27

Toggle Bit techniques described in “Toggle Bit Algorithm” in graming operation is completed when the data on DQ7 is equivalent to the data written to this bit at which time the device returns to the read mode and ...

Page 28

MBM29PL32TM/BM Erase Suspend/Resume The Erase Suspend command allows the user to interrupt Sector Erase operation and then perform read or programming to a sector not being erased. This command is applicable ONLY during the Sector Erase operation within the time-out ...

Page 29

Query Command (CFI : Common Flash Memory Interface) The CFI (Common Flash Memory Interface) specification outlines device and host system software interrogation handshake which allows specific vendor-specified software algorithms to be used for entire families of devices. This allows device-independent, ...

Page 30

MBM29PL32TM/BM (3) HiddenROM Program Command To program the data to the HiddenROM area, write the HiddenROM program command sequence during Hid- denROM mode. This command is the same as the usual program command, except that it needs to write the ...

Page 31

Write Operation Status Detailed in “Hardware Sequence Flags” are all the status flags which can determine the status of the device for current mode operation. When checking Hardware Sequence Flags during program operations, it should be checked 4 s after ...

Page 32

MBM29PL32TM/ Data Polling The devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read devices will produce reverse ...

Page 33

DQ 5 Exceeded Timing Limits DQ will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under 5 these conditions DQ will produce a “1”. This is a failure condition indicating that the program ...

Page 34

MBM29PL32TM/BM Reading Toggle Bits Whenever the system initially begins reading Toggle bit status, it must read DQ to determine whether a Toggle bit is toggling. Typically a system would note and store the value of ...

Page 35

Word/Byte Configuration BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the device. When this pin is driven high, the device operates in the word (16-bit) mode. Data is read and programmed at DQ low, the device ...

Page 36

MBM29PL32TM/BM ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All Pins Except A , OE, and RESET * Power Supply Voltage * 1 Input Voltage A , OE, ...

Page 37

MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V –2.0 V Maximum Undershoot Waveform Maximum Overshoot Waveform 1 +14.0 V +12 +0 Note: This waveform is applied ...

Page 38

MBM29PL32TM/BM ELECTRICAL CHARACTERISTICS 1. DC Characteristics Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current CC (Read ) * Active Current CC (Intra-Page Read ) * 2 ...

Page 39

AC Characteristics • Read Only Operations Characteristics Parameter Read Cycle Time Address to Output Delay Chip Enable to Output Delay Page Read Cycle Time Page Address to Output Delay Output Enable to Output Delay Chip Enable to Output High-Z ...

Page 40

MBM29PL32TM/BM • Write (Erase/Program) Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from High During Toggle Bit Polling Data Setup Time ...

Page 41

Parameter Write Pulse Width * 2 OE Setup Time to WE Active * 2 CE Setup Time to WE Active * 2 RESET Pulse Width RESET High Time Before Read Delay Time from Embedded Output Enable Erase Time-out Time ...

Page 42

MBM29PL32TM/BM ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Programming Time Effective Page Programming Time (Write Buffer Programming) Chip Programming Time Absolute Maximum Programming Time (16 words) Erase/Program Cycle TSOP (1) PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin ...

Page 43

SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Address OEH WE High-Z Data Read Operation Timing Diagram MBM29PL32TM/BM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from H ...

Page 44

MBM29PL32TM/ Data Address RESET Data 44 90/10 Address Valid PRC t ACC ...

Page 45

Bus Cycle 555h PA Address WPH t GHWL A0h Data Notes : PA is address of the memory location ...

Page 46

MBM29PL32TM/BM Address Data Notes : PA is address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the ...

Page 47

Address WPH t GHWL AAh Data RY/BY t VCS the sector address for ...

Page 48

MBM29PL32TM/BM Address CE WE Data RY/BY Erase Suspend Operation Timing Diagram 48 90/10 XXXh SPD B0h ...

Page 49

Address OEH Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation.) 7 Note : When checking ...

Page 50

MBM29PL32TM/BM Address /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 Note : When checking Hardware Sequence Flags during program operations, ...

Page 51

CE WE RY/BY RY/BY Timing Diagram during Program/Erase Operation Timing Diagram CE, OE RESET RESET Timing Diagram ( Not during Embedded Algorithms ) MBM29PL32TM/BM Rising edge of the last WE signal Entire programming or erase operations t BUSY t RH ...

Page 52

MBM29PL32TM/BM WE RESET RY/BY RESET Timing Diagram ( During Embedded Algorithms ) 52 90/ READY ...

Page 53

SGAX ...

Page 54

MBM29PL32TM/ VCS VIDR V ID RESET CE WE RY/BY Temporary Sector Group Unprotection Timing Diagram 54 90/10 t Program or Erase Command Sequence VLHT Unprotection period t VLHT ...

Page 55

VCS RESET t VLHT t VIDR Address Data 60h SGAX: Sector Group Address to be protected SGAY : Next Sector Group ...

Page 56

MBM29PL32TM/ VACCR t VCS V ACC ACC 90/10 t Program Command Sequence VLHT Acceleration period Accelerated Program Timing Diagram t VLHT t VLHT ...

Page 57

FLOW CHART EMBEDDED ALGORITHMS Increment Address Note : The sequence is applied for Word ( 16 ) mode. The addresses differ from Byte ( MBM29PL32TM/BM Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No ...

Page 58

MBM29PL32TM/BM EMBEDDED ALGORITHMS Chip Erase Command Sequence (Address/Command) Note : The sequence is applied for Word ( 16 ) mode. The addresses differ from Byte ( 58 90/10 Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm ...

Page 59

Start Wait 4 s after issuing Program Command Read Byte (DQ 7 Addr Read Byte (DQ 7 Addr Fail * : DQ is rechecked even “1” because ...

Page 60

MBM29PL32TM/ Read Toggle bit twice to determine whether it is toggling Recheck Toggle bit because it may stop toggling 90/10 Start Wait 4 s after issuing Program Command *1 Read ...

Page 61

Increment PLSCNT No PLSCNT 25? Yes Remove V from Write Reset Command Device Failed * : Byte ( 8 ) mode Sector Group Protection Algorithm MBM29PL32TM/BM Start Setup Sector Group Addr. ...

Page 62

MBM29PL32TM/ All protected sector groups are unprotected All previously protected sector groups are protected. Temporary Sector Group Unprotection Algorithm 62 90/10 Start RESET = Perform Erase or Program Operations RESET = V IH ...

Page 63

Device is Operating in No Extended Sector Group Temporary Sector Group Unprotection Mode To Setup Sector Group Protection Write XXXh/60h To Protect Sector Group Write 60h to Sector Address ( Increment PLSCNT To Verify Sector Group Protection ...

Page 64

MBM29PL32TM/BM FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for Word ( 16 ) mode. The addresses differ from Byte ( Embedded Program 64 90/10 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify ...

Page 65

... ORDERING INFORMATION Part No. MBM29PL32TM90TN 48-pin, plastic TSOP (1) MBM29PL32TM10TN MBM29PL32TM90PBT 48-ball, plastic FBGA MBM29PL32TM10PBT MBM29PL32BM90TN 48-pin, plastic TSOP (1) MBM29PL32BM10TN MBM29PL32BM90PBT 48-ball, plastic FBGA MBM29PL32BM10PBT MBM29PL32TM/BM 90 DEVICE NUMBER/DESCRIPTION 32 Mbit (4M Boot Sector 3.0 V-only Read, Program, and Erase MBM29PL32TM/BM Package Access Time (ns (FPT-48P-M19) 100 ns ...

Page 66

MBM29PL32TM/BM PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6 90/10 Note Values do not include resin protrusion. Resin protrusion and gate ...

Page 67

FBGA (BGA-48P-M20) 8.00 ± 0.20(.315 ± .008) (INDEX AREA) 0.10(.004) 2003 FUJITSU LIMITED B48020S-c-2-2 C MBM29PL32TM/BM +0.12 +.003 1.08 .043 –0.13 –.005 (Mounting height) 0.38 ± 0.10(.015 ± .004) (Stand off) 6.00 ± 0.20 4.00(.157) (.236 ± ...

Page 68

MBM29PL32TM/BM FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in ...