MBM29PL32BM Fujitsu Media Devices, MBM29PL32BM Datasheet - Page 40

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MBM29PL32BM

Manufacturer Part Number
MBM29PL32BM
Description
(MBM29PL32TM/BM) FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
Manufacturer
Fujitsu Media Devices
Datasheet

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40
MBM29PL32TM/BM
Write Cycle Time
Address Setup Time
Address Setup Time to OE Low During
Toggle Bit Polling
Address Hold Time
Address Hold Time from CE or OE High
During Toggle Bit Polling
Data Setup Time
Data Hold Time
OE Setup Time
CE High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write
Read Recover Time Before Write
CE Setup Time
WE Setup Time
CE Hold Time
WE Hold Time
CE Pulse Width
Write Pulse Width
CE Pulse Width High
Write Pulse Width High
Effective Page
Programming Time
Programming Time
Sector Erase Operation *
V
Recovery Time From RY/BY
Erase/Program Valid to RY/BY Delay
Rise Time to V
Rise Time to V
Voltage Transition Time *
(Write Buffer Programming)
(OE High to WE Low)
(OE High to CE Low)
CC
• Write (Erase/Program) Operations
Setup Time
ID
ACC
Parameter
*
2
*
3
1
2
Per Word
Word
90/10
JEDEC Standard Min
t
t
t
t
t
t
t
t
t
t
t
WHWH1
WHWH2
t
t
t
t
t
t
WLWH
WHWL
DVWH
WHDX
GHWL
WHEH
EHWH
AVAV
AVWL
WLAX
GHEL
ELWL
WLEL
ELEH
EHEL
Symbol
t
t
t
t
WHWH1
WHWH2
t
t
t
t
VACCR
t
t
t
t
t
GHWL
t
t
t
CEPH
OEPH
GHEL
BUSY
t
t
t
t
VLHT
t
t
t
t
t
t
WPH
VIDR
t
ASO
OES
CPH
t
AHT
VCS
WC
WH
DH
WS
CH
WP
AS
AH
DS
CS
CP
PB
500
500
90
15
45
35
20
20
35
35
25
30
50
0
0
0
0
0
0
0
0
0
0
0
4
23.5
Typ
100
1.0
90
Max
90
Value
Min
100
500
500
15
45
35
20
20
35
35
25
30
50
0
0
0
0
0
0
0
0
0
0
0
4
23.5
Typ
100
1.0
10
Max
90
(Continued)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ns
ns
ns
µs
s

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