MBM29PL65LM Fujitsu Media Devices, MBM29PL65LM Datasheet - Page 13

• Manufacturer Part Number: MBM29PL65LM
• Description: FLASH MEMORY CMOS 64 M (4M X 16) BIT MirrorFlashTM
• Manufacturer: Fujitsu Media Devices

A
6
1Ch
1Dh
2Ch
2Dh
1Ah
1Bh
1Eh
1Fh
2Ah
2Bh
2Eh
2Fh
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
to A
0
DQ
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0007h
0007h
000Ah
0000h
0001h
0005h
0004h
0000h
0017h
0001h
0000h
0005h
0000h
0001h
007Fh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
15
to DQ
Common Flash Memory Interface Code Table
0
Query-unique ASCII string “QRY”
Primary OEM Command Set
02h : AMD/FJ standard
Address for Primary Extended Table
Alternate OEM Command Set
(00h = not applicable)
Address for Alternate OEM Extended Table
V
DQ
DQ
V
DQ
DQ
V
Max timeout for write 2
Flash Device Interface description
01h :
Max number of byte in multi-byte write = 2
Erase Block Region 1 Information
bit 15 to bit 0 : y
bit 31 to bit 16 : z
Erase Block Region 2 Information
bit 15 to bit 0 : y
bit 31 to bit 16 : z
V
Typical timeout per single write 2
Typical timeout for Min size buffer write 2
Typical timeout per individual sector erase 2
Typical timeout for full chip erase 2
Max timeout for buffer write 2
Max timeout per individual sector erase 2
Max timeout for full chip erase 2
Device Size = 2
Number of Erase Block Regions within device (02h = Boot)
(z
(z
CC
CC
PP
PP
7
3
7
3
Min voltage (00h = no V
Max voltage (00h =no V
Min (write/erase)
Max (write/erase)
to DQ
to DQ
to DQ
to DQ
256 Byte)
256 Byte)
16
4
0
4
0
: 1V/bit,
: 100 mV/bit
: 1V/bit,
: 100 mV/bit
N
byte
number of sectors
size
number of sectors
size
N
times typical
pp
pp
N
pin)
pin)
times typical
Description
N
N
times typical
MBM29PL65LM
N
s
ms
N
N
N
times typical
s
N
ms
(Continued)
-90/10
13