MBM29PL65LM Fujitsu Media Devices, MBM29PL65LM Datasheet - Page 2

• Manufacturer Part Number: MBM29PL65LM
• Description: FLASH MEMORY CMOS 64 M (4M X 16) BIT MirrorFlashTM
• Manufacturer: Fujitsu Media Devices

2
MBM29PL65LM
*1 : MirrorFlash
*2 : Embedded Erase
FEATURES
• MirrorFlash Memory
• 0.23 m Process Technology
• 4 M 16 bit configuration
• Single 3.0 V read, program and erase
• Standard 48-pin TSOP (1) (Package suffix : TN)
• Minimum 100,000 program/erase cycles
• High performance Page mode (4 words)
• Sector erase architecture (Sectors can be grouped in any given combination.)
• HiddenROM Region
• Write Protect by WP pin
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
• Erase Suspend/Resume
• Low V
• Sector Group Protection
• Extended Sector Group Protection
• Fast Program
• Temporary sector group unprotection
• In accordance with CFI (Common Flash Memory Interface)
32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase.
CC
write inhibit
TM
is a trademark of Fujitsu Limited.
TM
TM
and Embedded Program
TM
*
2
TM
*
Algorithms
1
*
2
Algorithms
-90/10
TM
are trademarks of Advanced Micro Devices, Inc.