MBM29PL65LM Fujitsu Media Devices, MBM29PL65LM Datasheet - Page 33

• Manufacturer Part Number: MBM29PL65LM
• Description: FLASH MEMORY CMOS 64 M (4M X 16) BIT MirrorFlashTM
• Manufacturer: Fujitsu Media Devices

(Continued)
*1 : This does not include the preprogramming time.
*2 : This timing is for Sector Group Protection operation.
*3 : This timing is for Accelerated Program operation.
Note : Test conditions T
Rise Time to V
Rise Time to V
Voltage Transition Time *
Write Pulse Width *
OE Setup Time to WE Active *
CE Setup Time to WE Active *
RESET Pulse Width
RESET High Time Before Read
Delay Time from Embedded Output
Enable
Erase Time-out Time
Erase Suspend Transition Time
Sector Erase Time
Programming Time
Effective Page Programming Time
(Write Buffer Programming)
Chip Programming Time
Absolute Maximum
Programming Time (16 words)
Erase/Program Cycle
Input Capacitance
Output Capacitance
Control Pin Capacitance
RESET pin and ACC Pin
Capacitance
ERASE AND PROGRAMMING PERFORMANCE
TSOP (1) PIN CAPACITANCE
DQ
15
Parameter
pin capacitance is stipulated by output capacitance.
Parameter
Parameter
ID
ACC
*
2
*
3
2
A
= 25°C, f = 1.0 MHz
2
2
2
Symbol
100,000
C
C
C
C
JEDEC
Min
OUT
t
IN2
IN3
t
VACCR
t
—
—
—
—
—
IN
t
t
t
t
t
t
OESP
VLHT
VIDR
t
TOW
WPP
t
EOE
CSP
SPD
RP
RH
Symbol
Limits
Standard
V
V
V
V
IN
OUT
IN
IN
t
23.5
Typ
100
t
VACCR
t
Test Setup
t
t
t
t
t
t
OESP
—
—
—
VLHT
VIDR
t
t
TOW
WPP
EOE
CSP
SPD
= 0
= 0
= 0
RH
1
RP
= 0
3000
Max
MBM29PL65LM-90
600
Min
500
500
100
500
100
15
—
—
50
—
—
6
4
4
4
cycle
Typ
Unit
—
—
—
—
—
—
—
—
—
—
—
ms
MBM29PL65LM
µs
µs
Min
s
s
—
—
—
—
Max
Excludes programming time prior
to erasure
Excludes system-level overhead
Non programming within the same
page
—
—
—
—
—
—
—
—
90
—
20
Value
Typ
8.5
20
8
8
MBM29PL65LM-10
Min
500
500
100
500
100
50
—
—
4
4
4
Remarks
Typ
Max
—
—
—
—
—
—
—
—
—
—
—
—
10
12
10
25
Max
100
—
—
20
—
—
—
—
—
—
—
Unit
pF
pF
pF
pF
-90/10
Unit
ns
ns
µs
µs
µs
µs
ns
ns
ns
µs
µs
33