phd77nq03t NXP Semiconductors, phd77nq03t Datasheet

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phd77nq03t

Manufacturer Part Number
phd77nq03t
Description
Phd/phu77nq03t N-channel Trenchmos Fet
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PHD77NQ03T
Manufacturer:
NXP
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Part Number:
PHD77NQ03T
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
2. Pinning information
Table 1.
[1]
Pin
1
2
3
mb
It is not possible to make a connection to pin 2 of the SOT428 package.
Description
gate (G)
drain (D)
source (S)
mounting base; connected to
drain (D)
Pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
I
I
I
I
PHD/PHU77NQ03T
N-channel TrenchMOS FET
Rev. 01 — 28 November 2006
Fast switching
DC-to-DC converters
V
R
DS
DSon
25 V
9.5 m
[1]
Simplified outline
SOT428 (DPAK)
1
mb
2
3
I
I
I
I
Low thermal resistance
Computer motherboard
I
Q
D
SOT533 (IPAK)
GD
75 A
1
= 3.2 nC (typ)
mb
2
3
Product data sheet
Symbol
mbb076
G
D
S

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phd77nq03t Summary of contents

Page 1

PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 — 28 November 2006 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Fast switching 1.3 Applications I DC-to-DC converters 1.4 ...

Page 2

... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name PHD77NQ03T DPAK PHU77NQ03T IPAK 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage (DC) DGR V gate-source voltage GS I drain current ...

Page 3

... NXP Semiconductors 120 P der (%) 100 P tot P = ----------------------- - 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature Limit (A) DSon single pulse mb DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting base see th(j-mb) R thermal resistance from junction to ambient th(j-a) SOT428 SOT533 [1] Mounted on a printed-circuit board; vertical in still air th(j-mb) (K/W) 1 0.5 0.2 0.1 0. 0.02 single pulse - Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...

Page 5

... NXP Semiconductors 6. Characteristics Table 5. Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R gate resistance G R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge ...

Page 6

... NXP Semiconductors 0.2 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values ( 150 and 175 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 7

... NXP Semiconductors 4 V GS(th) (V) max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ( and Fig 11. Gate-source voltage as a function of gate charge ...

Page 8

... NXP Semiconductors ( 150 C 0 0.2 0.4 0 and 175 Fig 13. Source current as a function of source-drain voltage; typical values MHz GS Fig 15. Input and reverse transfer capacitances as a function of gate-source voltage; typical values PHD_PHU77NQ03T_1 Product data sheet 003aab289 ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 2.38 0.93 0.89 1.1 mm 2.22 0.46 0.71 0.9 OUTLINE VERSION IEC SOT428 Fig 16. Package outline SOT428 (DPAK) PHD_PHU77NQ03T_1 Product data sheet ...

Page 10

... NXP Semiconductors Plastic single-ended package (IPAK); 3 leads (in-line DIMENSIONS (mm are the original dimensions) UNIT 2.38 0.93 0.89 0.56 1.10 mm 2.22 0.46 0.71 0.46 0.96 Notes 1. Basic spacing between centers. 2. Terminal dimensions are uncontrolled within zone L OUTLINE VERSION IEC SOT533 Fig 17. Package outline SOT533 (IPAK) PHD_PHU77NQ03T_1 Product data sheet ...

Page 11

... NXP Semiconductors 8. Revision history Table 6. Revision history Document ID Release date PHD_PHU77NQ03T_1 20061128 PHD_PHU77NQ03T_1 Product data sheet PHD/PHU77NQ03T Data sheet status Change notice Product data sheet - Rev. 01 — 28 November 2006 N-channel TrenchMOS FET Supersedes - © NXP B.V. 2006. All rights reserved ...

Page 12

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 13

... NXP Semiconductors 11. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Legal information 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 9 ...

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