phd77nq03t NXP Semiconductors, phd77nq03t Datasheet - Page 2

• Manufacturer Part Number: phd77nq03t
• Description: Phd/phu77nq03t N-channel Trenchmos Fet
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHD_PHU77NQ03T_1
Product data sheet
Type number
PHD77NQ03T
PHU77NQ03T
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
Ordering information
Limiting values
Package
Name
DPAK
IPAK
Description
plastic single-ended surface-mounted package; 3 leads
(one lead cropped)
plastic single-ended package; 3 leads (in-line)
Conditions
25 C
25 C
T
T
T
T
T
T
unclamped inductive load; I
t
V
p
mb
mb
mb
mb
mb
mb
GS
= 0.17 ms; V
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
= 10 V; starting at T
Rev. 01 — 28 November 2006
T
T
j
j
175 C
175 C; R
GS
DS
GS
Figure 1
= 10 V; see
= 10 V; see
25 V; R
p
p
GS
j
= 20 k
10 s; see
10 s
= 25 C
GS
D
= 32 A;
Figure 2
= 50 ;
Figure 2
Figure 3
PHD/PHU77NQ03T
and
3
N-channel TrenchMOS FET
Min
-
-
-
-
-
-
-
-
-
-
55
55
© NXP B.V. 2006. All rights reserved.
Max
25
25
75
55.9
240
107
+175
+175
75
240
100
20
Version
SOT428
SOT533
2 of 13
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C