phd77nq03t NXP Semiconductors, phd77nq03t Datasheet - Page 8

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phd77nq03t

Manufacturer Part Number
phd77nq03t
Description
Phd/phu77nq03t N-channel Trenchmos Fet
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PHD_PHU77NQ03T_1
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Input and reverse transfer capacitances as a function of gate-source voltage; typical values
(A)
I
S
80
60
40
20
0
T
voltage; typical values
V
0.2
j
GS
= 25 C and 175 C; V
= 0 V; f = 1 MHz
0.4
150 C
0.6
GS
0.8
= 0 V
(pF)
C
10
10
10
T
j
4
3
2
= 25 C
10
-1
1
003aab289
V
SD
(V)
Rev. 01 — 28 November 2006
1.2
1
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
V
4
3
2
GS
10
V
as a function of drain-source voltage; typical
values
GS
-1
(V)
003aab291
= 0 V; f = 1 MHz
C
C
iss
rss
PHD/PHU77NQ03T
10
1
N-channel TrenchMOS FET
10
© NXP B.V. 2006. All rights reserved.
V
C
C
C
DS
003aab290
iss
oss
rss
(V)
10
2
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