fdb6644 Fairchild Semiconductor, fdb6644 Datasheet - Page 4

• Manufacturer Part Number: fdb6644
• Description: 30v N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
10
1000
8
6
4
2
0
100
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.1
0.01
0.1
I
D
R
0.0001
1
= 25A
SINGLE PULSE
DS(ON)
R
JC
V
T
GS
C
= 1.8
= 25
LIMIT
D = 0.5
= 10V
10
0.05
0.02
0.01
0.2
0.1
SINGLE PULSE
o
o
C/W
C
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
20
0.001
DC
1s
Figure 11. Transient Thermal Response Curve.
100ms
30
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
10
V
DS
1ms 100us
0.01
= 5V
40
15V
10V
100
50
0.1
t
1
, TIME (sec)
4200
3500
2800
2100
1400
1000
700
800
600
400
200
0.0001
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
1
RSS
C
0.001
OSS
5
V
Power Dissipation.
C
DS
ISS
0.01
, DRAIN TO SOURCE VOLTAGE (V)
10
10
t
0.1
1
, TIME (sec)
15
1
P(pk)
Duty Cycle, D = t
T
R
20
J
R
10
JC
- T
100
SINGLE PULSE
R
JC
(t) = r(t) + R
C
JC
T
t
= 1.8 °C/W
1
C
= P * R
= 1.8°C/W
t
= 25°C
2
100
FDP6644 Rev C(W)
25
V
f = 1MHz
GS
JC
1
= 0 V
JC
(t)
/ t
1000
2
30
1000