upd78f0124hgba1-8et-a Renesas Electronics Corporation., upd78f0124hgba1-8et-a Datasheet - Page 15

• Manufacturer Part Number: upd78f0124hgba1-8et-a
• Description: 8-bit Single-chip Microcontrollers
• Manufacturer: Renesas Electronics Corporation.

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1.1 Features
• Standard products and (A) grade products:
• (A1) grade products:
• Standard products and (A) grade products: T
• (A1) grade products: T
Minimum instruction execution time can be changed from high speed (0.125
speed system clock) to ultra low-speed (122
General-purpose register: 8 bits × 32 registers (8 bits × 8 registers × 4 banks)
ROM, RAM capacities
Note
On-chip single-power-supply flash memory
Self-programming (with boot swap function)
On-chip debug function (
On-chip power-on-clear (POC) circuit and low-voltage detector (LVI)
Short startup is possible via the CPU default start using the on-chip internal oscillator
On-chip clock monitor function using on-chip internal oscillator
On-chip watchdog timer (operable with internal oscillation clock)
On-chip key interrupt function
On-chip clock output controller
I/O ports: 39 (N-ch open drain: 4)
Timer: 7 channels
Serial interface: 2 channels
(UART (LIN (Local Interconnect Network)-bus supported): 1 channel, CSI/UART
10-bit resolution A/D converter: 8 channels
Supply voltage:
Operating ambient temperature:
Notes 1. Select either of the functions of these alternate-function pins.
Part Number
µ
µ
µ
V
V
PD78F0122H
PD78F0123H
PD78F0124H, 78F0124HD
DD
DD
= 2.5 to 5.5 V (with internal oscillation clock or subsystem clock: V
= 2.7 to 5.5 V (with internal oscillation clock: V
2. Use the product in a voltage range of 2.2 to 5.5 V because the detection voltage (V
3. Use the product in a voltage range of 2.25 to 5.5 V because the detection voltage (V
The internal flash memory and internal high-speed RAM capacities can be changed using the internal
memory size switching register (IMS).
on-clear (POC) circuit is 2.1 V ±0.1 V.
on-clear (POC) circuit is 2.0 to 2.25 V.
Item
A
µ
PD78F0124HD only)
= −40 to +110°C
Flash memory
CHAPTER 1 OUTLINE
User’s Manual U16962EJ3V0UD
µ
s: @ 32.768 kHz operation with subsystem clock)
A
Program Memory
= −40 to +85°C
DD
(ROM)
= 2.0 to 5.5 V
16 KB
24 KB
32 KB
Note
Note
Note
Note 3
)
DD
= 2.0 to 5.5 V
µ
s: @ 16 MHz operation with high-
Note 1
: 1 channel)
512 bytes
1024 bytes
Internal High-Speed RAM
Note 2
Data Memory
)
Note
POC
Note
POC
) of the power-
) of the power-
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